Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisot...

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Bibliographic details
Volume: 2014
Main Author: Lawrowski, Robert Damian
Prommesberger, Christian
Langer, Christoph
Dams, Florian
Schreiner, Rupert
Format: Journal Article
Language: English
Place of publication: LONDON Hindawi Publishing Corporation 06.04.2014
Hindawi Limited
published in: Advances in materials science and engineering Vol. 2014; pp. 1 - 6
Editor: Zhao, Feng
ORCID: 0000-0003-1542-2073
Data of publication: 20140406
ISSN: 1687-8434
EISSN: 1687-8442
Discipline: Engineering
Online Access: Fulltext
Database: Hindawi Publishing Complete
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