Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior

The authors report on the fabrication and characterization of p-type Si tip arrays with an integrated gate electrode for applications as field emission electron sources. After the reactive ion etching of the emitters, the combined thermal dry and wet oxidation was used for both the sharpening of the...

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Bibliographic details
Volume: 35
Main Author: Prommesberger, Christian
Langer, Christoph
Ławrowski, Robert
Schreiner, Rupert
Format: Journal Article
Language: English
Place of publication: MELVILLE A V S AMER INST PHYSICS 01.01.2017
published in: Journal of vacuum science and technology. B, Nanotechnology & microelectronics Vol. 35; no. 1; pp. 12201 - 12211
Data of publication: 20170100
ISSN: 2166-2746
2166-2754
EISSN: 2166-2754
Discipline: Engineering
Physics
Subjects:
Online Access: available in Bonn?
CODEN: JVTBD9
Database: Web of Knowledge
Science Citation Index Expanded
Web of Science
Web of Science - Science Citation Index Expanded - 2017
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